参数资料
型号: PT481FE0000F
厂商: Sharp Microelectronics
文件页数: 7/9页
文件大小: 0K
描述: PHOTO TRANS BLACK LEN 860NM SIDE
标准包装: 1,000
系列: *
电压 - 集电极发射极击穿(最大): 35V
电流 - 集电极 (Ic)(最大): 50mA
电流 - 暗 (Id)(最大): 1mA
波长: 860nm
视角: 70°
功率 - 最大: 75mW
安装类型: 通孔
方向: 侧视图
封装/外壳: 径向
其它名称: 425-2383-5
PT481FE0000F
■ Presence of ODCs (RoHS Compliance)
This product shall not contain the following materials, and they are not used in the production process for this product:
? Regulated substances: CFCs, Halon, Carbon tetrachloride, 1,1,1-Trichloroethane (Methylchloroform). Specific
brominated flame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
? Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl
ethers (PBDE).
? Content information about the six substances specified in “Management Methods for Control of Pollution
Caused by Electronic Information Products Regulation” (Chinese: )
Toxic and Hazdardous Substances
Category
Lead (Pb) mercury (Hg) Cadmium (Cd)
Hexavalent
chromiun (Cr 6+ )
Polybrominated
biphenyls (PBB)
Polybrominated
diphenyl ethers
(PBDE)
Photo Transistor
?
?
?
?
?
?
NOTE: ? indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement
as described in SJ/T 11363-2006 standard.
Sheet No.: D1-A01401EN
7
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