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参数资料
| 型号： | PZ1418B30U |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, MEATL CERAMIC, FM-2 |
| 文件页数： | 2/16页 |
| 文件大小： | 131K |
| 代理商： | PZ1418B30U |
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistors
PZ1418B30U; PZ1721B25U;
PZ2024B20U
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Internal input and output prematching ensures good
stability and easy broadband use.
APPLICATIONS
Common base class-B broadband amplifiers under CW
conditions in military and professional applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
RF performance up to T
mb
= 25
°
C in a common base class-B wideband amplifier.
TYPE NUMBER
f
(GHz)
V
CC
(V)
P
L
(W)
≥
27
≥
25
≥
20
G
p
(dB)
≥
7.3
≥
7
≥
6
η
C
(%)
≥
38
≥
35
≥
35
Z
i
; Z
L
(
)
PZ1418B30U
PZ1721B25U
PZ2024B20U
1.4 to 1.8
1.7 to 2.1
2 to 2.4
28
28
28
see Figs 6 and 7
see Figs 11 and 12
see Figs 16 and 17
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
相关PDF资料 |
PDF描述 |
|---|---|
| PZ1721B25U | NPN microwave power transistors |
| PZ2327B15U | TRANSISTOR | BJT | NPN | 2.1A I(C) | FO-57D |
| PZFJ108 | TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 80MA I(DSS) | SOT-223 |
| PZFJ109 | TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 40MA I(DSS) | SOT-223 |
| PZFJ110 | RF inductor, ceramic core, 5% tol, SMT, RoHS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PZ1418B30U,114 | 功能描述:两极晶体管 - BJT Single NPN 4A 45W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZ15CHEWS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| PZ15CHEWS_A0_00001 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| PZ15CHEWS_A0_10001 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| PZ15CHEWS_A1_00001 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
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