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参数资料
| 型号： | PZ1418B30U |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN microwave power transistors |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, MEATL CERAMIC, FM-2 |
| 文件页数： | 3/16页 |
| 文件大小： | 131K |
| 代理商： | PZ1418B30U |
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistors
PZ1418B30U; PZ1721B25U;
PZ2024B20U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R
BE
= 0
open collector
65
40
15
35
3
4
45
+200
200
235
V
V
V
V
A
W
°
C
°
C
°
C
T
mb
≤
75
°
C
Fig.2
Power derating curve as a function of
mounting base temperature.
handbook,
0
50
100
200
50
0
40
150
30
20
10
MGD970
Ptot
(W)
Tmb (
°
C)
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相关代理商/技术参数 |
参数描述 |
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| PZ1418B30U,114 | 功能描述:两极晶体管 - BJT Single NPN 4A 45W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZ15CHEWS | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| PZ15CHEWS_A0_00001 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| PZ15CHEWS_A0_10001 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| PZ15CHEWS_A1_00001 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
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