参数资料
型号: PZT3904
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: NPN General Purpose Amplifier(NPN型通用放大器)
中文描述: 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: SOT-223, 3 PIN
文件页数: 2/7页
文件大小: 64K
代理商: PZT3904
2
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 30 V, V
EB
= 0
V
CE
= 30 V, V
EB
= 0
40
60
6.0
V
V
V
nA
nA
50
50
OFF CHARACTERISTICS
ON CHARACTERISTICS*
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
SWITCHING CHARACTERISTICS
(except MMPQ3904)
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
I
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 1.0 MHz
V
= 0.5 V, I
C
= 0,
f = 1.0 MHz
I
C
= 100
μ
A, V
= 5.0 V,
R
S
=1.0k
, f=10 Hz to 15.7 kHz
300
MHz
C
obo
Output Capacitance
4.0
pF
C
ibo
Input Capacitance
8.0
pF
NF
Noise Figure
(except MMPQ3904)
5.0
dB
V
CC
= 3.0 V, V
BE
= 0.5 V,
I
C
= 10 mA, I
B1
= 1.0 mA
V
CC
= 3.0 V, I
C
= 10mA
I
B1
= I
B2
= 1.0 mA
35
35
200
50
ns
ns
ns
ns
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
40
70
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
0.2
0.3
0.85
0.95
V
V
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
0.65
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