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参数资料
| 型号： | PZTA06 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 0.5 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC PACKAGE-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 146K |
| 代理商： | PZTA06 |
M
NPN General Purpose Amplifier
MMBTA06
MPSA06
PZTA06
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
80
80
4.0
500
V
V
V
mA
°
C
-55 to +150
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 33.
CBE
TO-92
C
B
E
SOT-23
Mark: 1G
B
C
C
SOT-223
E
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Symbol
Characteristic
Max
Units
MPSA06
625
5.0
83.3
200
*MMBTA06
350
2.8
**PZTA06
1,000
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
357
125
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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