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参数资料
| 型号： | PZTA28 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Circular Connector; No. of Contacts:8; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:12-8 |
| 中文描述： | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 122K |
| 代理商： | PZTA28 |
M
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CES
Collector-Emitter Breakdown Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
CES
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
I
C
= 100
μ
A, V
BE
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CE
= 60 V, V
BE
= 0
V
EB
= 10 V, I
C
= 0
80
80
12
V
V
V
nA
nA
nA
100
500
100
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 100 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 0.01 mA
I
C
= 100 mA, I
B
= 0.1 mA
I
C
= 100 mA, V
CE
= 5.0 V
10,000
10,000
V
CE(
sat
)
Collector-Emitter Saturation Voltage
1.2
1.5
2.0
V
V
BE(
on
)
Base-Emitter On Voltage
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
Symbol
Parameter
Test Conditions
Min
Max
Units
I
= 10 mA, V
CE
= 5.0,
f = 100 MHz
V
CB
= 1.0 V, I
E
= 0, f = 1.0 MHz
125
MHz
C
obo
Output Capacitance
8.0
pF
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
P 03
0
0.01
0.1
0.2
20
40
60
80
100
I - COLLECTOR CURRENT (A)
h
F
25 °C
125 °C
- 40 °C
V = 5V
Collector-Emitter Saturation
Voltage vs Collector Current
P 03
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (mA)
V
C
- 40 oC
125 oC
β
= 1000
25 oC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PZTA29 | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| PZTA29_F081 | 功能描述:达林顿晶体管 100V BIP NPN DARLINGTON SOT223 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| PZTA42 | 功能描述:两极晶体管 - BJT NPN Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZTA42 T/R | 功能描述:两极晶体管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZTA42,115 | 功能描述:两极晶体管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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