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参数资料
| 型号： | QEB421TR |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | LED IR EMITTING 880NM 2-PLCC T/R |
| 标准包装： | 2,000 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 4mW/sr @ 100mA |
| 波长： | 880nm |
| 正向电压： | 1.5V |
| 视角： | 120° |
| 方向： | 顶视图 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-PLCC |
| 包装： | 带卷 (TR) |
QEB421
SURFACE MOUNT INFRARED
LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.083 (2.1)
0.067 (1.7)
0.091 (2.3)
0.083 (2.1)
0.035 (0.9)
0.041 (0.1)
0.028 (0.7)
0.134 (3.4)
0.118 (3.0)
0.094 (2.4)
0.043 (1.1)
0.020 (0.5)
FEATURES
? Wavelength = 880 nm, AlGaAs
SCHEMATIC
ANODE
NOTES:
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
? Wide Emission Angle, 120 °
? Surface Mount PLCC-2 Package
? High Power
ANODE
CATHODE
1. Dimensions are in inches (mm)
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS
(T A = 25 ° C unless otherwise specified)
NOTES
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow) (2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current (4)
Symbol
T opr
T stg
T sol
I F
V R
I FM
Rating
-55 to +100
-55 to +100
260 for 10 sec
100
5
1.75
Unit
° C
° C
° C
mA
V
A
1. Derate power dissipation linearly
2.4 mW/ ° C above 25 ° C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Pulse conditions; tp = 100 μs,
T = 10 ms.
Power
Dissipation (1)
P D
180
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T A =25°C)
PARAMETER
Peak Emission Wavelength
Spectral Bandwidth
Emission Angle
Forward Voltage
TEST CONDITIONS
I F = 100 mA
I F = 100 mA
I F = 100 mA
I F = 100 mA, tp = 20 ms
SYMBOL
P
V F
MIN.
—
—
—
—
TYP.
880
80
120
1.5
MAX.
—
—
—
1.8
UNITS
nm
nm
Deg.
V
I F = 1 A, tp = 100 μs
—
3.0
3.8
Reverse Current
Radiant Intensity
V R = 5 V
I F = 100 mA, tp = 20 ms
I R
I e
—
4
—
—
1
8
μA
mW/sr
I F = 1 A, tp = 100 μs
—
48
—
Radiant Flux
Temp. Coeff. of I E
Temp. Coeff. of V F
Temp. Coeff. of
Rise Time
Fall Time
I F = 100 mA, tp = 20 ms
I F = 100 mA
I F = 100 mA
I F = 100 mA
I F = 100 mA
e
T CI
T CV
T C
t r
t f
—
—
—
—
—
—
10
-0.5
-4
0.25
—
—
—
—
—
—
1
1
mW
%/K
mV/K
nm/K
μs
μs
? 2001 Fairchild Semiconductor Corporation
DS300385 2/26/01
1 OF 3
www.fairchildsemi.com
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