参数资料
型号: QEC113C6R0
厂商: Fairchild Optoelectronics Group
文件页数: 1/5页
文件大小: 0K
描述: LED IR GAAS 940NM PEACH 3MM
标准包装: 2,000
系列: QEC11x
电流 - DC 正向(If): 50mA
辐射强度(le)最小值@正向电流: 14mW/sr @ 100mA
波长: 940nm
正向电压: 1.5V
视角: 24°
方向: 顶视图
安装类型: 通孔
封装/外壳: T-1
包装: 带卷 (TR)
August 2008
QEC112, QEC113
Plastic Infrared Light Emitting Diode
Features PACKAGE DIMENSIONS
■ λ = 940nm
■ Chip material = GaAs
■ Package type: T-1 (3 mm)
■ Can be used with QSCXXX Photosensor
■ Narrow Emission Angle, 8° at 80% intensity
■ High Output Power
■ Package material and color: Clear, peach tinted plastic
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
Description
The QEC11X is an 940nm GaAs LED encapsulated in a
clear peach tinted, plastic T-1 package.
0.052 (1.32)
0.193 (4.90)
0.032 (0.082)
0.030 (0.76)
NOM
0.800 (20.3)
MIN
0.050 (1.27)
CATHODE
0.100 (2.54)
NOM
Schematic
ANODE
0.155 (3.94)
CATHODE
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (.25) on all non-nominal dimensions
unless otherwise specified.
?2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
www.fairchildsemi.com
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