参数资料
型号: QEC113C6R0
厂商: Fairchild Optoelectronics Group
文件页数: 3/5页
文件大小: 0K
描述: LED IR GAAS 940NM PEACH 3MM
标准包装: 2,000
系列: QEC11x
电流 - DC 正向(If): 50mA
辐射强度(le)最小值@正向电流: 14mW/sr @ 100mA
波长: 940nm
正向电压: 1.5V
视角: 24°
方向: 顶视图
安装类型: 通孔
封装/外壳: T-1
包装: 带卷 (TR)
Typical Performance Curves
1.0
Fig. 1 Normalized Intensity vs. Wavelength
975
Fig. 2 Peak Wavelength vs. Ambient Temperature
0.9
970
I F = 20mA DC
0.8
965
0.7
0.6
0.5
0.4
960
955
950
0.3
945
0.2
0.1
940
0.0
700
750
800
850
900
950
1,000
1,050
935
0
10
20
30
40
50
60
70
80
90
100
10
λ (nm)
Fig. 3 Normalized Radiant Intensity vs. Forward Current
T A – AMBIENT TEMPERTURE ( ° C)
Fig. 4 Normalized Radient Intensity vs. Ambient Temperature
1.4
Normalized to:
I F = 100mA Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
1.2
1.0
Normalized to:
I F = 20mA Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
0.8
1
0.6
0.4
0.2
0.1
10
100
1000
0.0
0
10
20
30
40
50
60
70
80
90
100
3.5
I F – FORWARD CURRENT (mA)
Fig. 5 Forward Voltage vs. Forward Current
1.55
T A – AMBIENT TEMPERTURE ( ° C)
Fig. 6 Forward Voltage vs. Ambient Temperature
3.0
I F Pulsed
t PW = 20mS
Duty Cycle = 4%
T A = 25 ° C
1.50
I F = 20mA Pulsed
t PW = 20mS
Duty Cycle = 4%
1.45
2.5
1.40
2.0
1.35
1.5
1.30
1.0
10
100
1000
1.25
0
10
20
30
40
50
60
70
80
90
100
I F – FORWARD CURRENT (mA)
?2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
3
T A – AMBIENT TEMPERTURE ( ° C)
www.fairchildsemi.com
相关PDF资料
PDF描述
QEC121 LED IR EMITTING ALGAAS 880NM 3MM
QEC122C6R0 LED IR ALGAAS 880NM PURPLE 3MM
QED221 LED IR EMITTING ALGAAS 880NM 5MM
QED234A4R0 LED IR EMITTING ALGAAS 940NM 5MM
QEE113 LED IR EMITTING 940NM SIDELOOKER
相关代理商/技术参数
参数描述
QEC113C6R0_Q 功能描述:红外发射源 Gaas infr Emitting RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
QEC121 功能描述:红外发射源 T1 A1GaAS LED 27mW RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
QEC122 功能描述:红外发射源 T1 A1Ga AS LED 39mW RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk
QEC122 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED LED ROHS COMPLIANT:NO
QEC122C4R0 功能描述:红外发射源 Infrared EmittIng alGaas RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk