参数资料
型号: QEC113C6R0
厂商: Fairchild Optoelectronics Group
文件页数: 2/5页
文件大小: 0K
描述: LED IR GAAS 940NM PEACH 3MM
标准包装: 2,000
系列: QEC11x
电流 - DC 正向(If): 50mA
辐射强度(le)最小值@正向电流: 14mW/sr @ 100mA
波长: 940nm
正向电压: 1.5V
视角: 24°
方向: 顶视图
安装类型: 通孔
封装/外壳: T-1
包装: 带卷 (TR)
Absolute Maximum Ratings (T A = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T OPR
T STG
T SOL-I
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron) (2,3,4)
Rating
-40 to +100
-40 to +100
240 for 5 sec
Units
°C
°C
°C
T SOL-F
Soldering Temperature
(Flow) (2,3)
260 for 10 sec
°C
I F
V R
P D
Continuous Forward Current
Reverse Voltage
Power Dissipation (1)
50
5
100
mA
V
mW
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics (T A = 25°C)
Symbol Parameter
λ PE
Peak Emission Wavelength
TC λ
Temperature Coef?cient
Test Conditions
I F = 100mA
Min.
Typ.
940
0.3
Max.
Units
nm
nm / °C
2 Θ 1 /2
V F
TC VF
I R
Emission Angle
Forward Voltage
Temperature Coef?cient
Reverse Current
I F = 100mA
I F = 100mA, tp = 20ms
V R = 5V
18
-2
1.5
10
°
V
mV / °C
μA
I E
I E
TC IE
t r
t f
C j
Radiant Intensity QEC112
Radiant Intensity QEC113
Temperature Coef?cient
Rise Time
Fall Time
Junction Capacitance
I F = 100mA, tp = 20ms
I F = 100mA, tp = 20ms
I F = 100mA
V R = 0V
6
14
40
-0.7
800
800
14
30
mW/sr
mW/sr
% / °C
ns
ns
pF
?2005 Fairchild Semiconductor Corporation
QEC112, QEC113 Rev. 1.0.2
2
www.fairchildsemi.com
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