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参数资料
| 型号： | QM20 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 3/6页 |
| 文件大小： | 76K |
| 代理商： | QM20 |
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
–1
10
0
10
7
5
4
3
2
–2
10
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
V
CE
=2.0V
T
j
=25°C
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
BE(sat)
V
CE(sat)
T
j
=25°C
T
j
=125°C
I
B
=80mA
50
40
30
20
10
00
1
2
3
4
5
T
j
=25°C
I
B
=20mA
I
B
=40mA
I
B
=80mA
I
B
=200mA
I
B
=400mA
3
10
7
5
4
3
2
2
10
7
5
4
3
2
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
2
V
CE
=2.0V
V
CE
=5.0V
T
j
=25°C
T
j
=125°C
10
–1
10
7
5
4
3
2
0
10
1
2
3
4
5
7
5
4
3
–2
2
T
j
=25°C
T
j
=125°C
I
C
=15A
I
C
=20A
I
C
=25A
1
10
7
5
4
3
2
10
7
5
4
3
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
3
2
I
B1
=120mA
I
B2
=–400mA
V
CC
=300V
t
s
t
on
t
f
T
j
=25°C
T
j
=125°C
相关PDF资料 |
PDF描述 |
|---|---|
| QM20KD-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM300DY-24B | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY-2HB | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY-2H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 300A I(C) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM200DY24 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY-24 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY24B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY-24B | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY2H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
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