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参数资料
| 型号： | QM20 |
| 厂商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率开关使用绝缘型 |
| 文件页数： | 4/6页 |
| 文件大小： | 76K |
| 代理商： | QM20 |
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
T
j
=25°C
T
j
=125°C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
10
10
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM20KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
1
–1
10
–2
10
7
0
10
–3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
–1
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
1
10
7
5
4
3
2
10
7
5
4
3
10
3 4 5 7
0
10
2 3
2
–1
2
3
4 5 7
1
10
t
s
T
j
=25°C
T
j
=125°C
I
B1
=120mA
I
C
=20A
V
CC
=300V
t
f
50
00
800
600
200
30
40
20
10
400
700
500
100
300
T
j
=125°C
I
B2
=–0.5A
I
B2
=–3A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
20s
5m
DC
100μs
5μ
1m
10m
T
C
=25°C
2
10
10
7
5
4
3
2
0.4
10
7
5
4
3
2
0.8
1.2
1.6
2.0
2.4
7
5
3
2
7
5
3
2
5
3
2
0
7
5
3
2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
T
C
=25°C
NON-PEPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
相关PDF资料 |
PDF描述 |
|---|---|
| QM20KD-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM300DY-24B | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY-2HB | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY-2H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 300A I(C) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QM200DY24 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY-24 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY24B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 200A I(C) |
| QM200DY-24B | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM200DY2H | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 200A I(C) |
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