参数资料
型号: R1EX24128BTAS0A#S0
厂商: Renesas Electronics America
文件页数: 14/18页
文件大小: 0K
描述: IC EEPROM 128K 400KHZ 8TSSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 128K (16K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-TSSOP
包装: 标准包装
其它名称: R1EX24128BTAS0A#S0DKR
R1EX24128BSAS0A/R1EX24128BTAS0A
Notes
Data Protection at V CC On/Off
When V CC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc) may act as a
trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this
EEPROM has a power on reset function. Be careful of the notices described below in order for the power on reset
function to operate correctly.
? SCL and SDA should be fixed to V CC or V SS during V CC on/off. Low to high or high to low transition during V CC
on/off may cause the trigger for the unintentional programming.
? V CC should be turned off after the EEPROM is placed in a standby state.
? V CC should be turned on from the ground level(V SS ) in order for the EEPROM not to enter the unintentional
programming mode.
? V CC turn on rate should be slower than 2 μ s/V.
Noise Suppression Time
This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than 100 ns. Be
careful not to allow noise of width more than 100 ns.
R10DS0006EJ0100 Rev.1.00
Aug. 04, 2010
Page 14 of 16
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