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参数资料
| 型号： | R1EX24128BTAS0A#S0 |
| 厂商： | Renesas Electronics America |
| 文件页数： | 9/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 128K 400KHZ 8TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 标准包装 |
| 其它名称： | R1EX24128BTAS0A#S0DKR |
R1EX24128BSAS0A/R1EX24128BTAS0A
Write Operations (WP =Low )
Byte Write: (Write operation during WP =Low status )
A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends acknowledgment
"0" at the ninth clock cycle. After these, the 128kbit EEPROM receives 2 sequence 8-bit memory address words. Upon
receipt of this memory address, the EEPROM outputs acknowledgment "0" and receives a following 8-bit write data.
After receipt of write data, the EEPROM outputs acknowledgment "0". If the EEPROM receives a stop condition, the
EEPROM enters an internally-timed write cycle and terminates receipt of SCL, SDA inputs until completion of the
write cycle. The EEPROM returns to a standby mode after completion of the write cycle.
Byte Write Operation
WP
Device
1st Memory
2nd Memory
128k
address
1010
W
address (n)
address (n)
Write data (n)
Start
ACK
R/W
ACK
ACK
ACK
Stop
Note: 1. Don't care bit
Page Write:
The EEPROM is capable of the page write operation which allows any number of bytes up to 64 bytes to be written in a
single write cycle. The page write is the same sequence as the byte write except for inputting the more write data. The
page write is initiated by a start condition, device address word, memory address(n) and write data (Dn) with every
ninth bit acknowledgment. The EEPROM enters the page write operation if the EEPROM receives more write data
(Dn+1) instead of receiving a stop condition. The a0 to a5 address bits are automatically incremented upon receiving
write data (Dn+1). The EEPROM can continue to receive write data up to 64 bytes. If the a0 to a5 address bits reaches
the last address of the page, the a0 to a5 address bits will roll over to the first address of the same page and previous
write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters
internally-timed write cycle.
Page Write Operation
WP
Device
1st Memory
2nd Memory
128k
address
1010
W
address (n)
address (n)
Write data (n)
Write data (n+m)
Start
ACK
R/W
ACK
ACK
ACK
ACK
Stop
Note: 1. Don't care bit
R10DS0006EJ0100 Rev.1.00
Aug. 04, 2010
Page 9 of 16
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1EX24128BTAS0G | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Two-wire serial interface 128k EEPROM |
| R1EX24128BTAS0I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Two-wire serial interface 128k EEPROM (16-kword × 8-bit) |
| R1EX24128BTAS0I#S0 | 制造商:Renesas Electronics Corporation 功能描述:SERIAL EEPROM 128K I2C,TSSOP(8), I-GRADE - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:IC EEPROM 128KBIT 400KHZ 8TSSOP |
| R1EX24256ASA00A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Two-wire serial interface 256k EEPROM (32-kword × 8-bit) |
| R1EX24256ASA00I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Two-wire serial interface 256k EEPROM (32-kword × 8-bit) |
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