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参数资料
| 型号： | R1LV1616HBG-4SI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| 中文描述： | 宽温版本16米的SRAM（1 - Mword】16位） |
| 文件页数： | 12/15页 |
| 文件大小： | 124K |
| 代理商： | R1LV1616HBG-4SI |
R1LV1616HBG-I Series
Rev.1.00, Sep.21.2005, page 12 of 13
Low V
CC
Data Retention Characteristics
(Ta =
40 to +85
°
C)
Test conditions
*
2
Vin
≥
0 V
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS2
≥
V
CC
0.2 V,
CS1#
≥
V
CC
0.2 V or
(3) LB# = UB#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V,
CS1#
≤
0.2 V
V
CC
= 3.0 V, Vin
≥
0 V
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS2
≥
V
CC
0.2 V,
CS1#
≥
V
CC
0.2 V or
(3) LB# = UB#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V,
CS1#
≤
0.2 V
Average value
See retention waveforms
Parameter
Symbol
V
DR
Min
1.5
Typ
Max
3.6
Unit
V
V
CC
for data retention
Data retention current
I
CCDR
0.5
*
1
8
μ
A
Chip deselect to data
retention time
Operation recovery time
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and not guaranteed.
2. CS2 controls address buffer, WE# buffer, CS1# buffer, OE# buffer, LB#, UB# buffer and Din buffer. If CS2
controls data retention mode, Vin levels (address, WE#, OE#, CS1#, LB#, UB#, I/O) can be in the high
impedance state. If CS1# controls data retention mode, CS2 must be CS2
≥
V
CC
0.2 V or 0 V
≤
CS2
≤
0.2
V. The other input levels (address, WE#, OE#, LB#, UB#, I/O) can be in the high impedance state.
t
CDR
0
ns
t
R
5
ms
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616HBG-5SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616HBG-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616RBG-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RBG-5SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616HBG-4SI#B0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM ASYNC SGL 3.3V 16MBIT 1MX16 45NS 48TFBGA - Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk |
| R1LV1616HBG-5SI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616HBG-5SI#B0 | 功能描述:IC SRAM 16MBIT 50NS 48CSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| R1LV1616HBG-I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616H-I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit) |
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