参数资料
型号: R1LV1616HBG-4SI
厂商: Renesas Technology Corp.
英文描述: Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
中文描述: 宽温版本16米的SRAM(1 - Mword】16位)
文件页数: 6/15页
文件大小: 124K
代理商: R1LV1616HBG-4SI
R1LV1616HBG-I Series
Rev.1.00, Sep.21.2005, page 6 of 13
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Test conditions
Vin = 0 V
V
I/O
= 0 V
Parameter
Symbol
Cin
C
I/O
Min
Typ
Max
8
10
Unit
pF
pF
Note
1
1
Input capacitance
Input/output capacitance
Note: 1. This parameter is sampled and not 100% tested.
AC Characteristics
(Ta =
40 to +85
°
C, V
CC
= 2.7 V to 3.6 V)
Test Conditions
Input pulse levels: V
IL
= 0.4 V, V
IH
= 2.4 V
Input rise and fall time: 5 ns
Input and output timing reference levels: 1.4 V
Output load: See figures (Including scope and jig)
50pF
Dout
RL=500
1.4 V
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