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参数资料
| 型号： | R1LV1616HBG-5SI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| 中文描述： | 宽温版本16米的SRAM（1 - Mword】16位） |
| 文件页数： | 4/15页 |
| 文件大小： | 124K |
| 代理商： | R1LV1616HBG-5SI |
R1LV1616HBG-I Series
Rev.1.00, Sep.21.2005, page 4 of 13
Operation Table
CS1#
H
×
×
L
L
L
L
L
L
L
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
Absolute Maximum Ratings
CS2
×
L
×
H
H
H
H
H
H
H
WE#
×
×
×
H
H
H
L
L
L
H
OE#
×
×
×
L
L
L
×
×
×
H
UB#
×
×
H
L
H
L
L
H
L
×
LB#
×
×
H
L
L
H
L
L
H
×
I/O0 to I/O7
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
High-Z
High-Z
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Parameter
Symbol
V
CC
V
T
P
T
Tstg
Tbias
Value
0.5 to +4.6
0.5
*
1
to V
CC
+ 0.3
*
2
1.0
55 to +125
40 to +85
Unit
V
V
W
°
C
°
C
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
Storage temperature range
Storage temperature range under bias
Notes: 1. V
T
min:
2.0 V for pulse half-width
≤
10 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
Parameter
Symbol
V
CC
V
SS
V
IH
V
IL
Ta
Min
2.7
0
2.2
0.3
40
Typ
3.0
0
Max
3.6
0
Unit
V
V
V
V
°
C
Note
1
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
Note: 1. V
IL
min:
2.0 V for pulse half-width
≤
10 ns.
V
CC
+ 0.3
0.6
+85
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616HBG-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616RBG-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RBG-5SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-5SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616HBG-5SI#B0 | 功能描述:IC SRAM 16MBIT 50NS 48CSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| R1LV1616HBG-I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616H-I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit) |
| R1LV1616HSA-4LI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4SI | 制造商:Renesas Electronics 功能描述:2M~8 / 1M~16 45ns 3V 48TSOP Tray 制造商:Renesas Electronics Corporation 功能描述:SRAM 16MBIT 3V 45NS 48TSOP 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I |
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