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参数资料
| 型号： | R1LV1616HBG-5SI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| 中文描述： | 宽温版本16米的SRAM（1 - Mword】16位） |
| 文件页数： | 5/15页 |
| 文件大小： | 124K |
| 代理商： | R1LV1616HBG-5SI |
R1LV1616HBG-I Series
Rev.1.00, Sep.21.2005, page 5 of 13
DC Characteristics
Parameter
Symbol
|I
LI
|
|I
LO
|
Min
Typ
Max
1
1
Unit
μ
A Vin = V
SS
to V
CC
μ
A CS1# = V
IH
or CS2 = V
IL
or
OE# = V
IH
or WE# = V
IL
or
LB# = UB# = V
IH
, V
I/O
= V
SS
to V
CC
mA CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/ V
IL
, I
I/O
= 0 mA
mA Min. cycle, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
WE# = V
IH
, Others = V
IH
/V
IL
mA Min. cycle, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
mA Cycle time = 70 ns, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
WE# = V
IH
, Others = V
IH
/V
IL
Address increment scan or decrement
scan
mA Cycle time = 70 ns, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
Address increment scan or decrement
scan
mA Cycle time = 1
μ
s, duty = 100%,
I
I/O
= 0 mA, CS1#
≤
0.2 V,
CS2
≥
V
CC
0.2 V
V
IH
≥
V
CC
0.2 V, V
IL
≤
0.2 V
mA CS2 = V
IL
μ
A
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS1#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V or
(3) LB# = UB#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V,
CS1#
≤
0.2 V
Average value
V
I
OH
=
1 mA
V
I
OH
=
100
μ
A
V
I
OL
= 2 mA
V
I
OL
= 100
μ
A
Test conditions
Input leakage current
Output leakage current
Operating current
I
CC
20
Average operating current
I
CC1
(READ)
22
*
1
35
I
CC1
30
*
1
50
I
CC2
(READ)
3
*
1
8
I
CC2
20
*
1
30
I
CC3
3
*
1
8
I
SB
I
SB1
0.1
*
1
0.5
*
1
0.5
8
Standby current
0 V
≤
Vin
Output high voltage
Output low voltage
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and not guaranteed.
V
OH
V
OH
V
OL
V
OL
2.4
0.4
0.2
V
CC
0.2
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616HBG-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616RBG-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RBG-5SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-5SI | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
| R1LV1616RSA-5SR | 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616HBG-5SI#B0 | 功能描述:IC SRAM 16MBIT 50NS 48CSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| R1LV1616HBG-I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616H-I | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit) |
| R1LV1616HSA-4LI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-4SI | 制造商:Renesas Electronics 功能描述:2M~8 / 1M~16 45ns 3V 48TSOP Tray 制造商:Renesas Electronics Corporation 功能描述:SRAM 16MBIT 3V 45NS 48TSOP 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I |
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