参数资料
型号: R1LV1616HBG-5SI
厂商: Renesas Technology Corp.
英文描述: Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
中文描述: 宽温版本16米的SRAM(1 - Mword】16位)
文件页数: 5/15页
文件大小: 124K
代理商: R1LV1616HBG-5SI
R1LV1616HBG-I Series
Rev.1.00, Sep.21.2005, page 5 of 13
DC Characteristics
Parameter
Symbol
|I
LI
|
|I
LO
|
Min
Typ
Max
1
1
Unit
μ
A Vin = V
SS
to V
CC
μ
A CS1# = V
IH
or CS2 = V
IL
or
OE# = V
IH
or WE# = V
IL
or
LB# = UB# = V
IH
, V
I/O
= V
SS
to V
CC
mA CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/ V
IL
, I
I/O
= 0 mA
mA Min. cycle, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
WE# = V
IH
, Others = V
IH
/V
IL
mA Min. cycle, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
mA Cycle time = 70 ns, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
WE# = V
IH
, Others = V
IH
/V
IL
Address increment scan or decrement
scan
mA Cycle time = 70 ns, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
Address increment scan or decrement
scan
mA Cycle time = 1
μ
s, duty = 100%,
I
I/O
= 0 mA, CS1#
0.2 V,
CS2
V
CC
0.2 V
V
IH
V
CC
0.2 V, V
IL
0.2 V
mA CS2 = V
IL
μ
A
(1) 0 V
CS2
0.2 V or
(2) CS1#
V
CC
0.2 V,
CS2
V
CC
0.2 V or
(3) LB# = UB#
V
CC
0.2 V,
CS2
V
CC
0.2 V,
CS1#
0.2 V
Average value
V
I
OH
=
1 mA
V
I
OH
=
100
μ
A
V
I
OL
= 2 mA
V
I
OL
= 100
μ
A
Test conditions
Input leakage current
Output leakage current
Operating current
I
CC
20
Average operating current
I
CC1
(READ)
22
*
1
35
I
CC1
30
*
1
50
I
CC2
(READ)
3
*
1
8
I
CC2
20
*
1
30
I
CC3
3
*
1
8
I
SB
I
SB1
0.1
*
1
0.5
*
1
0.5
8
Standby current
0 V
Vin
Output high voltage
Output low voltage
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and not guaranteed.
V
OH
V
OH
V
OL
V
OL
2.4
0.4
0.2
V
CC
0.2
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