参数资料
型号: R1RW0416DGE-2LR
厂商: Renesas Technology Corp.
元件分类: DRAM
英文描述: 4M High Speed SRAM (256-kword x 16-bit)
中文描述: 4分高速SRAM(256 - KWord的x 16位)
文件页数: 14/16页
文件大小: 100K
代理商: R1RW0416DGE-2LR
R1RW0416D Series
Rev.1.00, Mar.12.2004, page 14 of 14
Low V
CC
Data Retention Characteristics
(Ta = 0 to +70
°
C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol Min
Max
Unit
Test conditions
V
CC
for data retention
V
DR
2.0
V
V
CS#
V
CC
0.2 V,
(1) 0 V
V
IN
0.2 V or
(2) V
CC
V
IN
V
CC
0.2 V
V
CC
= 3 V
V
CS#
V
CC
0.2 V,
(1) 0 V
V
IN
0.2 V or
(2) V
CC
V
IN
V
CC
0.2 V
See retention waveform
Data retention current
I
CCDR
400
μ
A
Chip deselect to data retention time
t
CDR
t
R
0
ns
Operation recovery time
5
ms
Low V
CC
Data Retention Timing Waveform
CC
V
3.0 V
0 V
CS#
t
CDR
t
R
V
CC
CS#
V
CC
– 0.2 V
2.0 V
DR
V
Data retention mode
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相关代理商/技术参数
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