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参数资料
| 型号： | R1RW0416DGE-2LR |
| 厂商： | Renesas Technology Corp. |
| 元件分类： | DRAM |
| 英文描述： | 4M High Speed SRAM (256-kword x 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件页数： | 8/16页 |
| 文件大小： | 100K |
| 代理商： | R1RW0416DGE-2LR |
R1RW0416D Series
Rev.1.00, Mar.12.2004, page 8 of 14
Write Cycle
R1RW0416D
-2
Parameter
Symbol
Min
Max
Unit
Notes
Write cycle time
t
WC
t
AW
t
CW
t
WP
t
BW
t
AS
t
WR
t
DW
t
DH
t
OW
t
OHZ
t
WHZ
12
6
ns
Address valid to end of write
8
ns
Chip select to end of write
8
ns
8
Write pulse width
8
ns
7
Byte select to end of write
8
ns
Address setup time
0
ns
5
Write recovery time
0
ns
6
Data to write time overlap
6
ns
Data hold from write time
0
ns
Write disable to output in low-Z
3
ns
1
Output disable to output in high-Z
ns
1
Write enable to output in high-Z
Notes: 1. Transition is measured
±
200 mV from steady voltage with output load (B). This parameter is
sampled and not 100% tested.
2. If the CS# or LB# or UB# low transition occurs simultaneously with the WE# low transition or
after the WE# transition, output remains a high impedance state.
3. WE# and/or CS# must be high during address transition time.
4. If CS#, OE#, LB# and UB# are low during this period, I/O pins are in the output state. Then the
data input signals of opposite phase to the outputs must not be applied to them.
5. t
is measured from the latest address transition to the latest of CS#, WE#, LB# or UB# going
low.
6. t
is measured from the earliest of CS#, WE#, LB# or UB# going high to the first address
transition.
7. A write occurs during the overlap of a low CS#, a low WE# and a low LB# or a low UB# (t
). A
write begins at the latest transition among CS# going low, WE# going low and LB# going low or
UB# going low. A write ends at the earliest transition among CS# going high, WE# going high
and LB# going high or UB# going high.
8. t
CW
is measured from the later of CS# going low to the end of write.
6
ns
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1RW0416DGE-2LR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube |
| R1RW0416DGE-2PI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit) |
| R1RW0416DGE-2PI#B0 | 制造商:Renesas Electronics Corporation 功能描述:4-MBIT HIGH SPEED STATIC RAM ORGANIZED 256-KWORD ? 16-BIT - Bulk 制造商:Renesas Electronics 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ Tube |
| R1RW0416DGE-2PR | 制造商:Renesas Electronics Corporation 功能描述:IC,memory,SRAM,4Mb,high speed, |
| R1RW0416DGE-2PR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ T/R |
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