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参数资料
| 型号： | R1RW0416DGE-2PR |
| 厂商： | Renesas Technology Corp. |
| 元件分类： | DRAM |
| 英文描述： | 4M High Speed SRAM (256-kword x 16-bit) |
| 中文描述： | 4分高速SRAM（256 - KWord的x 16位） |
| 文件页数： | 7/16页 |
| 文件大小： | 100K |
| 代理商： | R1RW0416DGE-2PR |
R1RW0416D Series
Rev.1.00, Mar.12.2004, page 7 of 14
AC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 3.3 V
±
0.3 V, unless otherwise noted.)
Test Conditions
Input pulse levels: 3.0 V/0.0 V
Input rise and fall time: 3 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
Output load (B)
(for t
CLZ
, t
OLZ
, t
BLZ
, t
CHZ
, t
OHZ
,
t
BHZ
, t
WHZ
, and t
OW
)
D
OUT
353
319
3.3 V
5 pF
1.5 V
30 pF
D
OUT
RL = 50
Output load (A)
Zo = 50
Read Cycle
R1RW0416D
-2
Parameter
Symbol
Min
Max
Unit
Notes
Read cycle time
t
RC
t
AA
t
ACS
t
OE
t
BA
t
OH
t
CLZ
t
OLZ
t
BLZ
t
CHZ
t
OHZ
t
BHZ
12
3
12
ns
Address access time
ns
Chip select access time
12
ns
Output enable to output valid
6
ns
Byte select to output valid
6
6
ns
Output hold from address change
ns
Chip select to output in low-Z
3
ns
1
Output enable to output in low-Z
0
ns
1
Byte select to output in low-Z
0
ns
1
Chip deselect to output in high-Z
ns
1
Output disable to output in high-Z
6
ns
1
Byte deselect to output in high-Z
6
ns
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1RW0416DGE-2PR#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 12ns 44-Pin SOJ T/R |
| R1RW0416DI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit) |
| R1RW0416DI_10 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit) |
| R1RW0416DSB-0PI | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit) |
| R1RW0416DSB-0PI#D0 | 制造商:Renesas Electronics Corporation 功能描述:Bulk |
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