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参数资料
| 型号： | RA08H1317M-E01 |
| 元件分类： | 放大器 |
| 英文描述： | 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | 30 X 10 MM, 5.40 MM HEIGHT, MODULE-4 |
| 文件页数： | 1/9页 |
| 文件大小： | 50K |
| 代理商： | RA08H1317M-E01 |
MITSUBISHI RF MOSFET MODULE
RA08H1317M
135-175MHz 8W 12.5V PORTABLE/MOBILE RADIO
RA08H1317M
MITSUBISHI ELECTRIC
23 Dec 2002
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
for 12.5-volt portable/ mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(IDD
0 @ V
DD=12.5V, VGG=0V)
Pout>8W @ VDD=12.5V, VGG=3.5V, Pin=20mW
η
T>40%
@ Pout=8W (VGG control), VDD=12.5V, Pin=20mW
Broadband Frequency Range: 135-175MHz
Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
Module Size: 30 x 10 x 5.4 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA08H1317M-E01
RA08H1317M-01
(Japan - packed without desiccator)
Antistatic tray,
25 modules/tray
BLOCK DIAGRAM
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
3
2
4
1
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RA-08-K | 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
| RA-08-K-T | 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
| RA08N1317M | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M_06 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M_10 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
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