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| 型号： | RA08H1317M-E01 |
| 元件分类： | 放大器 |
| 英文描述： | 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | 30 X 10 MM, 5.40 MM HEIGHT, MODULE-4 |
| 文件页数： | 8/9页 |
| 文件大小： | 50K |
| 代理商： | RA08H1317M-E01 |
MITSUBISHI RF POWER MODULE
RA 08H1317 M
RA08H1317M
MITSUBISHI ELECTRIC
23 Dec 2002
8/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage
current flows from the battery into the drain.
Around VGG=2.5V, the output power and drain current increases substantially.
Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50
?
c) Is the source impedance ZG=50
?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and
can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced
mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding
those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios.
Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are
caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the pos sibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such
as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any
malfunction or mishap.
Keep safety first in your circuit designs!
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| RA08N1317M_10 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
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