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参数资料
| 型号： | RA08H1317M-E01 |
| 元件分类： | 放大器 |
| 英文描述： | 135 MHz - 175 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | 30 X 10 MM, 5.40 MM HEIGHT, MODULE-4 |
| 文件页数： | 2/9页 |
| 文件大小： | 50K |
| 代理商： | RA08H1317M-E01 |
MITSUBISHI RF POWER MODULE
RA 08H1317 M
RA08H1317M
MITSUBISHI ELECTRIC
23 Dec 2002
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<3.5V
16
V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW
4
V
Pin
Input Power
40
mW
Pout
Output Power
f=135-175MHz,
ZG=ZL=50
10
W
Tcase(OP)
Operation Case Temperature Range
-30 to +90
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
135
175
MHz
Pout
Output Power
VDD=12.5V,VGG=3.5V, Pin=20mW
8
W
η
T
Total Efficiency
40
%
2fo
2
nd Harmonic
-25
dBc
ρ
in
Input VSWR
4.4:1
—
IGG
Gate Current
Pout=8W (VGG control),
VDD=12.5V,
Pin=20mW
1
mA
—
Stability
VDD=5-13.2V, Pin=10-30mW, Pout<9W (VGG control),
Load VSWR=4:1
No parasitic oscillation
—
Load VSWR Tolerance
VDD=13.2V, Pin=20mW, Pout=8W (VGG control),
Load VSWR=20:1
No degradation or
destroy
—
All parameters, conditions, ratings, and limits are subject to change without noti ce.
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相关代理商/技术参数 |
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| RA-08-K | 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
| RA-08-K-T | 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
| RA08N1317M | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M_06 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M_10 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
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