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参数资料
| 型号： | REJ03C0098_R1LV0408C |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Wide Temperature Range Version 4M SRAM (512-kword 】 8-bit) |
| 中文描述： | 宽温版本4分的SRAM（512 - KWord的】8位） |
| 文件页数： | 5/14页 |
| 文件大小： | 94K |
| 代理商： | REJ03C0098_R1LV0408C |
R1LV0408C-I Series
Rev.2.00, May.25.2004, page 5 of 12
Operation Table
WE#
CS#
OE#
Mode
V
CC
current
I/O0 to I/O7
Ref. cycle
×
H
H
×
H
Not selected
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
High-Z
Read cycle
L
Output disable
High-Z
H
L
L
Read
Dout
L
L
H
Write
Din
Write cycle (1)
L
Note: H: V
IH
, L: V
IL
,
×
: V
IH
or V
IL
L
L
Write
Din
Write cycle (2)
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
V
CC
V
T
P
T
Topr
0.5 to +4.6
0.5
*
1
to V
CC
+ 0.5
*
2
0.7
40 to +85
65 to +150
40 to +85
V
V
W
°
C
°
C
°
C
Operating temperature
Storage temperature range
Tstg
Storage temperature range under bias
Notes: 1. V
T
min:
3.0 V for pulse half-width
≤
30 ns.
2. Maximum voltage is +4.6 V.
Tbias
DC Operating Conditions
(Ta =
40 to +85
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
V
SS
V
IH
V
IL
2.7
3.0
3.6
V
0
0
0
V
Input high voltage
2.2
0.3
*
1
V
CC
+ 0.3
0.6
V
Input low voltage
Note: 1. V
IL
min:
3.0 V for pulse half-width
≤
30 ns.
V
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