参数资料
型号: RFP3055LE
厂商: Fairchild Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: MOSFET N-CH 60V 11A TO-220AB
标准包装: 400
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 11A
开态Rds(最大)@ Id, Vgs @ 25° C: 107 毫欧 @ 8A,5V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 11.3nC @ 10V
输入电容 (Ciss) @ Vds: 350pF @ 25V
功率 - 最大: 38W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
RFD3055LE, RFD3055LESM
Typical Performance Curves Unless Otherwise Speci?ed (Continued)
1.2
1.0
0.8
0.6
V GS = V DS , I D = 250 μ A
1.2
1.1
1.0
0.9
I D = 250 μ A
-80
-40
0 40 80 120 160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
C ISS = C GS + C GD
10
V DD = 30V
8
100
C OSS ? C DS + C GD
6
4
2
WAVEFORMS IN
DESCENDING ORDER:
I D = 11A
I D = 5A
10
V GS = 0V, f = 1MHz
C RSS = C GD
0
I D = 3A
0.1
1
10
60
0
2
4 6
8
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Q g , GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
V DS
BV DSS
L
t P
V DS
VARY t P TO OBTAIN
REQUIRED PEAK I AS
R G
+
V DD
I AS
V DD
V GS
DUT
-
0V
t P
I AS
0.01 ?
0
t AV
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
?2002 Fairchild Semiconductor Corporation
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
RFD3055LE, RFD3055LESM Rev. C0
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