参数资料
型号: RFP50N06
厂商: Fairchild Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 60V 50A TO-220AB
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品目录绘图: MOSFET TO-220AB
标准包装: 400
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 22 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 150nC @ 20V
输入电容 (Ciss) @ Vds: 2020pF @ 25V
功率 - 最大: 131W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1605 (CN2011-ZH PDF)
RFP50N06
Data Sheet
N-Channel Power MOSFET
60V, 50A, 22 m ?
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
September 20 13
Features
? 50A, 60V
? r DS(ON) = 0.022 ?
? Temperature Compensating PSPICE ? Model
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? 175 o C Operating Temperature
Symbol
D
Ordering Information
PART NUMBER
RFP50N06
PACKAGE
TO- 220AB
BRAND
RFP50N06
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
?2002 Fairchild Semiconductor Corporation
DRAIN
(FLANGE)
GATE
RFP50N06 Rev. C0
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相关代理商/技术参数
参数描述
RFP50N06 制造商:Intersil Corporation 功能描述:MOSFET N TO-220
RFP50N06_F102 制造商:Fairchild Semiconductor Corporation 功能描述:
RFP50N06_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
RFP50N06_Q 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFP50N06LE 制造商:Rochester Electronics LLC 功能描述:- Bulk