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| 型号： | RFP50N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 50A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 2020pF @ 25V |
| 功率 - 最大： | 131W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
RFP50N06
Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Speci?ed
RFP50N06
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DSS
Drain to Gate Voltage (R GS = 20k ? ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V GS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T pkg
60
60
± 20
50
(Figure 5)
(Figure 6)
131
0.877
-55 to 175
300
260
V
V
V
A
W
W/ o C
o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied.
NOTE:
1. T J = 25 o C to 150 o C.
Electrical Speci?cations
T C = 25 o C, Unless Otherwise Speci?ed
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
SYMBOL
BV DSS
V GS(TH)
TEST CONDITIONS
I D = 250 μ A, V GS = 0V (Figure 11)
V GS = V DS , I D = 250 μ A (Figure 10)
MIN
60
2
TYP
-
-
MAX
-
4
UNITS
V
V
Zero Gate Voltage Drain Current
I DSS
V DS = 60V,
V GS = 0V
T C = 25 o C
T C = 150 o C
-
-
-
-
1
50
μ A
μ A
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
I GSS
r DS(ON)
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
V GS = ± 20V
I D = 50A, V GS = 10V (Figures 9)
V DD = 30V, I D = 50A
R L = 0.6 ? , V GS = 10V
R GS = 3.6 ?
(Figure 13)
-
-
-
-
-
-
-
-
-
-
-
12
55
37
13
-
± 100
0.022
95
-
-
-
-
75
nA
?
ns
ns
ns
ns
ns
ns
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Q g(TOT)
Q g(10)
Q g(TH)
V GS = 0 to 20V
V GS = 0 to 10V
V GS = 0 to 2V
V DD = 48V, I D = 50A,
R L = 0.96 ?
I g(REF) = 1.45mA
(Figure 13)
-
-
-
125
67
3.7
150
80
4.5
nC
nC
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C ISS
C OSS
C RSS
R θ JC
R θ JA
V DS = 25V, V GS = 0V
f = 1MHz
(Figure 12)
(Figure 3)
TO- 220
-
-
-
-
-
-
-
2020
600
200
-
-
-
-
-
-
1.14
62
-
pF
pF
pF
o C/W
o C/W
-
Source to Drain Diode Speci?cations
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
V SD
t rr
TEST CONDITIONS
I SD = 50A
I SD = 50A, dI SD /dt = 100A/ μ s
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
?2002 Fairchild Semiconductor Corporation
RFP50N06 Rev. C0
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相关代理商/技术参数 |
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| RFP50N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
| RFP50N06_F102 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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| RFP50N06_Q | 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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