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参数资料
| 型号： | RFP50N06 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 50A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 400 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 20V |
| 输入电容 (Ciss) @ Vds： | 2020pF @ 25V |
| 功率 - 最大： | 131W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
RFP50N06
Typical Performance Curves Unless Otherwise Speci?ed
(Continued)
300
100
STARTING T J = 25 o C
125
100
V GS = 10V
V GS = 8V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
V GS = 7V
75
10
STARTING T J = 150 o C
If R = 0
t AV = (L) (I AS ) / (1.3 RATED BV DSS - V DD )
50
25
V GS = 6V
V GS = 5V
If R ≠ 0
t AV = (L/R) ln [(I AS *R) / (1.3 RATED BV DSS - V DD ) + 1]
1
0.01 0.1 1
10
0
0
1.5
3.0
4.5
V GS = 4V
6.0
7.5
t AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes 9321 and 9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
125
100
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
-55 o C
25 o C
2.5
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10V, I D = 50A
175 o C
75
50
25
0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
2.0
1.5
1.0
0.5
0
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
V GS = V DS , I D = 250 μ A
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
I D = 250 μ A
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
?2002 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
RFP50N06 Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RFP50N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
| RFP50N06_F102 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFP50N06_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFP50N06_Q | 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFP50N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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