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| 型号： | RHP030N03T100 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 3A SOT-89 |
| 产品目录绘图： | xT100 Series SOT-89 |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 6.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 160pF @ 10V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | MPT3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1637 (CN2011-ZH PDF) |
| 其它名称： | RHP030N03T100DKR |
RHP030N03
Transistors
Electrical characteristics curves
1000
Ta=25 ° C
f=1MHz
1000
Ta=25 ° C
10
V DS =10V
V GS =0V
V DD = 15V
V GS = 10V
Pulsed
100
Ciss
Coss
100
R G =10 ?
Pulsed
1
Ta=125 ° C
75 ° C
25 ° C
? 25 ° C
10
Crss
tf
td (off)
10
td (on)
tr
0.1
1
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0.01
0
0.5
1
1.5
2
2.5
3
3.5
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : I D (A)
Fig.2 Switching Characteristics
GATE-SOURCE VOLTAGE : V GS (V)
Fig.3 Typical Transfer Characteristics
0.5
Ta = 25 ° C
Pulsed
10
V GS = 0V
Pulsed
10
Ta = 25 ° C
Pulsed
0.4
0.3
0.2
1.5A
I D = 3.0A
1
0.1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1
0.1
V GS =10V
0V
0.1
0.01
0.01
0
0
2
4
6
8
10
12
14
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001
0
0.2
0.4
0.6
0.8
1
1.2
GATE-SOURCE VOLTAGE : V GS (V)
Fig.4 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.5 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage ( ΙΙ )
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
V GS = 10V
Pulsed
1
V GS = 4V
Pulsed
2.5
2
1.5
V SD = 10V
I D =1mA
Pulsed
0.1
0.1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1
0.5
0.01
0.01
0.1
1
10
0.01
0.01
0.1
1
10
0
-50
-25
0
25
50
75
100
125
150
DRAIN CURRENT : I D (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
CHANNEL TEMPERATURE : Tch ( ° C)
Fig.9 Gate Threshold Voltage vs.
Channel Temperature
Rev.A
3/3
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