参数资料
型号: RN262CST2R
厂商: Rohm Semiconductor
文件页数: 2/3页
文件大小: 169K
描述: DIODE PIN HF SW 30V 100MA VMN2
标准包装: 8,000
二极管类型: PIN - 单
电压 - 峰值反向(最大): 30V
电流 - 最大: 100mA
电容@ Vr, F: 0.4pF @ 1V,1MHz
电阻@ Vr, F: 1.5 欧姆 @ 10mA,100MHz
功率耗散(最大): 100mW
封装/外壳: 2-SMD,扁平引线
供应商设备封装: VMN2
包装: 带卷 (TR)
RN266CS
 
』Electrical characteristics curves
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
AVE:0.732?
Ta=25°C
f=100MHz
IF=10mA
n=10pcs
0
0.1
0.2
0.3
0.4
0.5
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
AVE:1.334?
Ta=25°C
f=100MHz
IF=3mA
n=10pcs
0.01
0.1
1
10
012345678910
810
820
830
840
850
860
0.001
0.01
0.1
1
10
100
1000
0 1020304050
0.1
1
1 10 100 1000
Ta=25°C
VR=0V
0.1
1
10
100
0.1
1
10
f=10MHz
f=1MHz
f=100MHz
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000 1100
FORWARD VOLTAGE : VF(mV)
VF-IF
CHARACTERISTICS
FORWARD CURRENT : I
F
(mA)
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE : VR(V)
VR-IR
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
VF
DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:I
R
(nA)
IR
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
ELECTROSTATIC
DDISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
FORWARD CURRENT:IF(mA)
rf-IF
CHARACTERISTICS
FORWARD OPERATING
RESISTANCE:rf(
?
)
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
FORWARD OPERATING
RESISTANCE:rf(
?
)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FREQUENCY(MHz)
Ct-f CHARACTERISTICS
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
FORWARD OPERATING
RESISTANCE:rf(
?
)
f=1MHz
AVE:831.3mV
Ta=25°C
IF=10mA
n=30pcs
Ta=25°C
VR=30V
n=30pcs
AVE:0.05824nA
0
0.1
0.2
0.3
0.4
0.5
AVE:0.256pF
Ta=25°C
f=1MHz
VR=1V
n=10pcs
0
1
2
3
4
5
AVE:0.46kV
AVE:1.67kV
C=100pF
R=1.5k?
C=200pF
R=0?
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=150°C
Ta=25°C
Ta=-25°C
C
Ta=125°C
Ta=75°C
Ta=150°
2/2
2009.12 - Rev.A
Data Sheet
www.rohm.com
?2009 ROHM Co., Ltd. All rights reserved.
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