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参数资料
| 型号： | RN262GT2R |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 2/3页 |
| 文件大小： | 106K |
| 描述： | DIODE PIN HF SW 30V 100MA VMD2 |
| 标准包装： | 8,000 |
| 二极管类型： | PIN - 单 |
| 电压 - 峰值反向(最大)： | 30V |
| 电流 - 最大： | 100mA |
| 电容@ Vr, F： | 0.4pF @ 1V，1MHz |
| 电阻@ Vr, F： | 1.5 欧姆 @ 10mA，100MHz |
| 功率耗散（最大）： | 100mW |
| 封装/外壳： | 2-SMD，扁平引线 |
| 供应商设备封装： | VMD2 |
| 包装： | 带卷 (TR) |
RN262G
Diodes
2/2
』Electrical characteristic curves (Ta=25°C)
.
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
ELECTROSTATIC
DI
SCHARGE TEST ESD(KV)
ESD DISPERSION MAP
FORWARD CURRENT:IF(mA)
rf-IF CHARACTERISTICS
FORWARD OPERATING
RESISTANCE:rf(Ω)
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
FORWARD OPERATING
RESISTANCE:rf(Ω)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
FREQUENCY(MHz)
Ct-f CHARACTERISTICS
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
FORWARD OPERATING
RESISTANCE:rf(Ω)
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000 1100
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
0.001
0.01
0.1
1
10
100
1000
0 1020304050
Ta=25℃
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=150℃
0.01
0.1
1
10
012345678910
f=1MHz
0.1
1
10
100
0.1
1
10
f=10MHz
f=1MHz
f=100MHz
0.1
1
1
10
100 1000
Ta=25℃
VR=0V
810
820
830
840
850
860
AVE:831.3mV
Ta=25℃
IF=10mA
n=30pcs
0
0.1
0.2
0.3
0.4
0.5
Ta=25℃
VR=30V
n=30pcs
AVE:0.05824nA
0
0.1
0.2
0.3
0.4
0.5
AVE:0.256pF
Ta=25℃
f=1MHz
VR=1V
n=10pcs
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
AVE:1.334Ω
Ta=25℃
f=100MHz
IF=3mA
n=10pcs
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
AVE:0.732Ω
Ta=25℃
f=100MHz
IF=10mA
n=10pcs
0
1
2
3
4
5
AVE:0.46kV
AVE:1.67kV
C=100pF
R=1.5kΩ
C=200pF
R=0Ω
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