参数资料
型号: RRH040P03TB1
厂商: Rohm Semiconductor
文件页数: 8/12页
文件大小: 0K
描述: MOSFET P-CH 30V 4A SOP8
产品目录绘图: xTB1 Series SOP-8
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 75 毫欧 @ 4A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 5.2nC @ 5V
输入电容 (Ciss) @ Vds: 480pF @ 10V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
其它名称: RRH040P03TB1DKR
RRH040P03
l Electrical characteristic curves
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(II)
1000
Data Sheet
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(III)
1000
100
V GS = - 10V
T a = 125oC
T a = 75oC
T a = 25oC
T a = - 25oC
100
V GS = - 4.5V
T a = 125oC
T a = 75oC
T a = 25oC
T a = - 25oC
10
0.1
1
10
10
0.1
1
10
Drain Current : -I D [A]
Fig.19 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
1000
Drain Current : -I D [A]
100
V GS = - 4.0V
T a = 125oC
T a = 75oC
T a = 25oC
T a = - 25oC
10
0.1
1
10
Drain Current : -I D [A]
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8/11
2012.06 - Rev.C
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