参数资料
型号: RRH050P03TB1
厂商: Rohm Semiconductor
文件页数: 6/12页
文件大小: 0K
描述: MOSFET P-CH 30V 5A SOP8
产品目录绘图: xTB1 Series SOP-8
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 9.2nC @ 5V
输入电容 (Ciss) @ Vds: 850pF @ 10V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
其它名称: RRH050P03TB1DKR
RRH050P03
l Electrical characteristic curves
Fig.9 Breakdown Voltage
vs. Junction Temperature
60
V GS =0V
I D = - 1mA
Data Sheet
Fig.10 Typical Transfer Characteristics
10
V DS = - 10V
1
40
0.1
T a = 125oC
T a = 75oC
T a = 25oC
T a = - 25oC
20
0.01
0
-50
0
50
100
150
0.001
1.0
1.5
2.0
2.5
3.0
Junction Temperature : T j [ ° C ]
Fig.11 Gate Threshold Voltage
vs. Junction Temperature
3
V DS = - 10V
I D = - 1mA
2
Gate - Source Voltage : -V GS [V]
Fig.12 Transconductance vs. Drain Current
100
V DS = - 10V
10
1
1
T a = - 25oC
T a = 25oC
T a = 75oC
T a = 125oC
0
-50
0
50
100
150
0
0.1
1.0
10.0
Junction Temperature : T j [ ° C ]
Drain Current : -I D [A]
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6/11
2012.06 - Rev.C
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