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参数资料
| 型号： | RSF014N03TL |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.4A TUMT3 |
| 产品目录绘图： | TUMT-3 Package Top |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 240 毫欧 @ 1.4A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 70pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-SMD，扁平引线 |
| 供应商设备封装： | TUMT3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1638 (CN2011-ZH PDF) |
| 其它名称： | RSF014N03TLDKR |
RSF014N03
Transistors
Electrical characteristics curves
I D = 1.4A
R G = 10 ?
1000
100
Ta = 25 ° C
f = 1MHz
V GS = 0V
C iss
1000
100
t f
Ta = 25 ° C
V DD = 15V
V GS = 10V
R G = 10 ?
Pulsed
10
Ta = 25 ° C
9 V DD = 15V
8
7 Pulsed
6
t d (off)
5
10
C oss
C rss
10
t d (on)
4
3
2
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V DS (V)
1
0.01
t r
0.1
1
10
1
0
0
1
2
3
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : I D (A)
Fig.2 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1
V DS = 10V
Pulsed
Ta = 125 ° C
1000
Ta = 25 ° C
900 Pulsed
800
10
V GS = 0V
Pulsed
0.1
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
700
600
500
I D =0.7A
I D =1.4A
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
400
0.01
300
200
100
0.1
0.001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
2
4
6
8
10
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V GS (V)
Fig.4 Typical Transfer Characteristics
GATE SOURCE VOLTAGE : V GS (V)
Fig.5 Static Drain-Source
On-State Resistance
vs. Gate-Source Voltage
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
V GS = 10V
10000
V GS = 4.5V
10000
V GS = 4V
Pulsed
Pulsed
Pulsed
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
100
100
100
10
0.01
0.1
1
10
10
0.01
0.1
1
10
10
0.01
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain Current ( ΙΙ )
DRAIN CURRENT : I D (A)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain Current ( ΙΙΙ )
Rev.B
3/4
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