参数资料
型号: RSQ045N03TR
厂商: Rohm Semiconductor
文件页数: 1/12页
文件大小: 0K
描述: MOSFET N-CH 30V 4.5A TSMT6
产品目录绘图: TSMT-6 Package Top
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 38 毫欧 @ 4.5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
闸电荷(Qg) @ Vgs: 9.5nC @ 5V
输入电容 (Ciss) @ Vds: 520pF @ 10V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: SOT-23-6 细型,TSOT-23-6
供应商设备封装: TSMT6
包装: 标准包装
产品目录页面: 1638 (CN2011-ZH PDF)
其它名称: RSQ045N03DKR
RSQ045N03
Nch 30V 4.5A Power MOSFET
l Outline
Datasheet
V DSS
R DS(on) (Max.)
I D
P D
30V
38m W
4.5A
1.25W
TSMT6
(1)
(2)
(3)
(6)
(5)
(4)
l Features
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
l Inner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
* 1 ESD PROTECTION DIODE
* 2 BODY DIODE
l Packaging specifications
Packaging
Taping
l Application
Reel size (mm)
180
DC/DC converters
Type
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
8
3,000
TR
QL
l Absolute maximum ratings (T a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
1/11
Symbol
V DSS
I D *1
I D,pulse *2
V GSS
P D *3
P D *4
T j
T stg
Value
30
? 4.5
? 18
? 20
1.25
0.6
150
- 55 to + 150
Unit
V
A
A
V
W
W
°C
°C
2012.10 - Rev.B
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