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参数资料
| 型号： | RSR025N03TL |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.5A TSMT3 |
| 产品目录绘图： | RxR0 Series TSMT-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 4.1nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 165pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | TSMT3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1638 (CN2011-ZH PDF) |
| 其它名称： | RSR025N03TLDKR |
RSR025N03
Transistors
4V Drive Nch MOS FET
RSR025N03
Structure
External dimensions (Unit : mm)
Silicon N-channel
MOS FET
TSMT3
2.9
0.4
1.0MAX
0.85
0.7
(3)
Features
0~0.1
1) Low on-resistance.
(1)
(2)
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3) .
(1) Gate
0.95 0.95
1.9
0.16
Each lead has same dimensions
Application
Power switching, DC / DC converter.
Packaging specifications
(2) Source
(3) Drain
Abbreviated symbol : QY
Equivalent circuit
Type
Package
Code
Basic ordering unit (pieces)
Taping
TL
3000
(3)
(3)
RSR025N03
(1)
? 2
(1)
(2)
? 1
Absolute maximum ratings (Ta=25 ° C)
Parameter
Symbol
Limits
Unit
(2)
(1) Gate
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
V DSS
V GSS
I D
I DP ? 1
I S
I SP ? 1
P D ? 2
Tch
Tstg
30
20
± 2.5
± 10
0.8
3.2
1
150
? 55 to 150
V
V
A
A
A
A
W
° C
° C
(2) Source
(3) Drain
? A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
? 1 Pw ≤ 100 μ s, Duty cycle ≤ 2%
? 2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a) ?
Limits
125
Unit
° C / W
? 2 Mounted on a ceramic board.
Rev.C
1/3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RSR025N05 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Nch MOSFET |
| RSR025N05TL | 制造商:ROHM Semiconductor 功能描述: |
| RSR025P03 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Pch MOS FET |
| RSR025P03TL | 功能描述:MOSFET P-CH 30V 2.5A TSMT3 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RSR-02-B | 制造商:DBLECTRO 制造商全称:DB Lectro Inc 功能描述:SLIDE TYPE DIP SWITCH |
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