- 您现在的位置：买卖IC网 > Datasheet目录505 > RTQ020N03TR (Rohm Semiconductor)MOSFET N-CH 30V 2A TSMT6 Datasheet资料下载
参数资料
| 型号： | RTQ020N03TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/3页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2A TSMT6 |
| 产品目录绘图： | TSMT-6 Package Top |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 3.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 135pF @ 10V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | TSMT6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1638 (CN2011-ZH PDF) |
| 其它名称： | RTQ020N03DKR |
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关PDF资料 |
PDF描述 |
|---|---|
| RTQ020N05TR | MOSFET N-CH 45V 2A TSMT6 |
| RTQ035N03TR | MOSFET N-CH 30V 3.5A TSMT6 |
| RTQ045N03TR | MOSFET N-CH 30V 4.5A TSMT6 |
| RTR020N05TL | MOSFET N-CH 45V 2A TSMT3 |
| RTR025N03TL | MOSFET N-CH 30V 2.5A TSMT3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RTQ020N05 | 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch MOSFET |
| RTQ020N05TR | 功能描述:MOSFET N-CH 45V 2A TSMT6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| RTQ025P02 | 制造商:ROHM 制造商全称:Rohm 功能描述:DC-DC Converter (−20V, −2.5A) |
| RTQ025P02TR | 功能描述:MOSFET P-CH 20V 2.5A TSMT6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RTQ030P02 | 制造商:ROHM 制造商全称:Rohm 功能描述:DC-DC Converter (−20V, −3.0A) |
发布紧急采购，3分钟左右您将得到回复。