参数资料
型号: RZE002P02TL
厂商: Rohm Semiconductor
文件页数: 5/5页
文件大小: 0K
描述: MOSFET P-CH 20V 200MA EMT3
产品目录绘图: RUE Series EMT-3
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 200mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.2 欧姆 @ 200mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 100µA
闸电荷(Qg) @ Vgs: 1.4nC @ 4.5V
输入电容 (Ciss) @ Vds: 115pF @ 10V
功率 - 最大: 150mW
安装类型: 表面贴装
封装/外壳: SC-75,SOT-416
供应商设备封装: EMT3
包装: 标准包装
产品目录页面: 1639 (CN2011-ZH PDF)
其它名称: RZE002P02TLDKR
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Notes
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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The technical information specified herein is intended only to show the typical functions of and
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