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参数资料
| 型号： | S1227-1010BQ |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 3/4页 |
| 文件大小： | 145K |
| 代理商： | S1227-1010BQ |
Si photodiode
S1227 series
KSPDA0094EA
KSPDA0095EA
KSPDA0096EA
KSPDA0097EA
S1227-33BQ
S1227-33BR
s Dimensional outlines (unit: mm)
S1227-16BQ
S1227-16BR
8.5 ± 0.2
2.7
±
0.1
0.5
1.5
±
0.1
6.2
ANODE MARK
0.5
LEAD
12.2
13.5 ± 0.13
15 ± 0.15
0.85
ACTIVE AREA
HOLE
(2
×) 0.8
PHOTOSENSITIVE
SURFACE
8.5 ± 0.2
2.7
±
0.1
1.5
±
0.1
6.2
ANODE MARK
13.5 ± 0.13
15 ± 0.15
0.35
ACTIVE AREA
HOLE
(2
×) 0.8
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
7.6 ± 0.1
6.0
±
0.1
ACTIVE AREA
0.1
2.0
±
0.1
10.5
0.75
0.35
4.5 ± 0.2
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
6.6 ± 0.3
5.0
±
0.3
7.6 ± 0.1
6.0
±
0.1
ACTIVE AREA
2.0
±
0.1
10.5
0.65
0.35
6.6 ± 0.3
4.5 ± 0.2
5.0
±
0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S1227-1010BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-16BQ | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-16BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BQ | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
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