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参数资料
| 型号： | S1227-1010BQ |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 4/4页 |
| 文件大小： | 145K |
| 代理商： | S1227-1010BQ |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2004 Hamamatsu Photonics K.K.
Si photodiode
S1227 series
Cat. No. KSPD1036E04
Aug. 2004 DN
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
15.0
±
0.15
ACTIVE AREA
2.15
±
0.1
10.5
0.8
0.3
15.1 ± 0.3
12.5 ± 0.2
13.7
±
0.3
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
10.1 ± 0.1
8.9
±
0.1
ACTIVE AREA
2.0
±
0.1
10.5
0.65
0.3
9.2 ± 0.3
7.4 ± 0.2
8.0
±
0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
10.1 ± 0.1
8.9
±
0.1
ACTIVE AREA
0.1
2.0
±
0.1
10.5
0.75
0.3
9.2 ± 0.3
7.4 ± 0.2
8.0
±
0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
S1227-1010BQ
S1227-1010BR
KSPDA0100EA
KSPDA0101EA
KSPDA0098EA
KSPDA0099EA
S1227-66BQ
S1227-66BR
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 ± 0.2
15.0
±
0.15
ACTIVE AREA
2.15
±
0.1
10.5
0.9
0.3
15.1 ± 0.3
12.5 ± 0.2
13.7
±
0.3
0.1
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S1227-1010BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-16BQ | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-16BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BQ | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
| S1227-33BR | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si photodiode For UV to visible, precision photometry; suppressed IR sensitivity |
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