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参数资料
| 型号： | S29AL008D70MAI011 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 |
| 封装： | MO-180AAA, SOP-44 |
| 文件页数： | 23/52页 |
| 文件大小： | 2004K |
| 代理商： | S29AL008D70MAI011 |
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Publication Number S29AL008D_00
Revision A
Amendment 11
Issue Date February 27, 2009
This product has been retired and is not recommended for designs. For new and current designs, S29AL008J supercedes
S29AL008D. This is the factory-recommended migration path. Please refer to the S29AL008J data sheet for specifications and
ordering information.
Distinctive Characteristics
Architectural Advantage
Single Power Supply Operation
– 2.7 to 3.6 volt read and write operations for battery-powered
applications
Manufactured on 200 nm Process Technology
– Compatible with 0.32 m and 230 nm Am29LV800 devices
Flexible Sector Architecture
– One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte
sectors (byte mode)
– One 8 Kword, two 4 Kword, one 16-Kword, and fifteen 32-Kword
sectors (word mode)
– Supports full chip erase
– Sector Protection features:
– A hardware method of locking a sector to prevent any program or
erase operations within that sector
– Sectors can be locked in-system or via programming equipment
– Temporary Sector Unprotect feature allows code changes in
previously locked sectors
Unlock Bypass Program Command
– Reduces overall programming time when issuing multiple program
command sequences
Top or Bottom Boot Block Configurations Available
Embedded Algorithms
– Embedded Erase algorithm automatically preprograms and erases
the entire chip or any combination of designated sectors
– Embedded Program algorithm automatically writes and verifies data
at specified addresses
Compatibility with JEDEC Standards
– Pinout and software compatible with single-power supply Flash
– Superior inadvertent write protection
Performance Characteristics
High Performance
– Access times as fast as 55 ns
– Extended temperature range (-40°C to +125°C)
Ultra-low Power Consumption (typical values at 5 MHz)
– 200 nA Automatic Sleep mode current
– 200 nA standby mode current
– 7 mA read current
– 15 mA program/erase current
Cycling Endurance: 1,000,000 cycles per sector typical
Data Retention: 20 years typical
– Reliable operation for the life of the system
Package Option
48-ball FBGA
48-pin TSOP
44-pin SO
Software Features
Data# Polling and Toggle Bits
– Provides a software method of detecting program or erase operation
completion
Erase Suspend/Erase Resume
– Suspends an erase operation to read data from, or program data to,
a sector that is not being erased, then resumes the erase operation
Hardware Features
Ready/Busy# Pin (RY/BY#)
– Provides a hardware method of detecting program or erase cycle
completion
Hardware Reset Pin (RESET#)
– Hardware method to reset the device to reading array data
S29AL008D
8 Megabit (1M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Data Sheet
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL008D70MAI012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI020 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI021 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI022 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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