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参数资料
| 型号： | S29AL008D70MAI011 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 |
| 封装： | MO-180AAA, SOP-44 |
| 文件页数： | 7/52页 |
| 文件大小： | 2004K |
| 代理商： | S29AL008D70MAI011 |
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February 27, 2009 S29AL008D_00_A11
S29AL008D
15
Data
She e t
See Reading Array Data on page 21 for more information. Refer to Table 15.1, Read Operations on page 36
for timing specifications and to Figure 15.1 on page 36 for the timing diagram. ICC1 in DC Characteristics
on page 33 represents the active current specification for reading array data.
7.3
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or
words. Refer to Word/Byte Configuration on page 14 for more information.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The Word/
Byte Program Command Sequence on page 22 contains details on programming data to the device using
both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Table 7.2 on page 16 and
Table 7.3 on page 17 indicate the address space that each sector occupies. A sector address consists of the
address bits required to uniquely select a sector. The Command Definitions on page 21 contains details on
erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode on page 18 and
Autoselect Command Sequence on page 22 for more information.
ICC2 in DC Characteristics on page 33 represents the active current specification for the write mode. The AC
Characteristics on page 36 contains timing specification tables and timing diagrams for write operations.
7.4
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings and ICC read specifications apply. Refer to Write
Operation Status on page 27 for more information, and to AC Characteristics on page 36 for timing diagrams.
7.5
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device is in the standby mode, but the standby current is greater. The device requires
standard access time (tCE) for read access when the device is in either of these standby modes, before it is
ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
7.6
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
Characteristics on page 33 represents the automatic sleep mode current specification.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL008D70MAI012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI020 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI021 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI022 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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