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参数资料
| 型号： | S29AL008D70MAI011 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 |
| 封装： | MO-180AAA, SOP-44 |
| 文件页数： | 34/52页 |
| 文件大小： | 2004K |
| 代理商： | S29AL008D70MAI011 |
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S29AL008D
S29AL008D_00_A11 February 27, 2009
Da ta
Sh e e t
General Description
The S29AL008D is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words.
The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. For more information, refer to
publication number 21536. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and
erase operations. A standard EPROM programmer can also be used to program and erase the device.
This device is manufactured using Spansion’s 200 nm process technology, and offers all the features and
benefits of the Am29LV800B, which was manufactured using 0.32 m process technology.
The standard device offers access times of 55, 60, 70, and 90 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention the device contains separate chip enable (CE#),
write enable (WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using standard microprocessor write timings. Register
contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading
data out of the device is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write
cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin,
or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle is
completed, the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming
equipment.
The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or
program data to, any sector that is not selected for erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When addresses are stable for a specified amount of time, the
device enters the automatic sleep mode. The system can also place the device into the standby mode.
Power consumption is greatly reduced in both these modes.
Spansion’s Flash technology combines years of Flash memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
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| S29AL016M90FFI010 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL008D70MAI012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI020 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI021 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MAI022 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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