参数资料
型号: S29AL008D90TAI023
厂商: SPANSION LLC
元件分类: PROM
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
封装: MO-142BDD, TSOP-48
文件页数: 3/52页
文件大小: 2004K
代理商: S29AL008D90TAI023
February 27, 2009 S29AL008D_00_A11
S29AL008D
11
Data
She e t
Figure 3.3 Fine-pitch BGA Pinout (Top View, Balls Facing Down)
3.1
Special Handling Instructions for FBGA Package
Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA
packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity
may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of
time.
A1
B1
C1
D1
E1
F1
G1
H1
A2
B2
C2
D2
E2
F2
G2
H2
A3
B3
C3
D3
E3
F3
G3
H3
A4
B4
C4
D4
E4
F4
G4
H4
A5
B5
C5
D5
E5
F5
G5
H5
A6
B6
C6
D6
E6
F6
G6
H6
DQ15/A-1
VSS
BYTE#
A16
A15
A14
A12
A13
DQ13
DQ6
DQ14
DQ7
A11
A10
A8
A9
VCC
DQ4
DQ12
DQ5
NC
RESET#
WE#
DQ11
DQ3
DQ10
DQ2
NC
A18
NC
RY/BY#
DQ9
DQ1
DQ8
DQ0
A5
A6
A17
A7
OE#
VSS
CE#
A0
A1
A2
A4
A3
相关PDF资料
PDF描述
S29AL008D90TAN010 Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked
S29AL008D70MFN010 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90MFN010 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D70MFN011 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90MFN011 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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