参数资料
型号: S29AL008D90TAI023
厂商: SPANSION LLC
元件分类: PROM
英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
封装: MO-142BDD, TSOP-48
文件页数: 30/52页
文件大小: 2004K
代理商: S29AL008D90TAI023
36
S29AL008D
S29AL008D_00_A11 February 27, 2009
Da ta
Sh e e t
15. AC Characteristics
Notes
1. Not 100% tested.
Figure 15.1 Read Operations Timings
Table 15.1 Read Operations
Parameter
Description
Speed Options
JEDEC
Std
Test Setup
55
60
70
90
Unit
tAVAV
tRC
Read Cycle Time (Note 1)
Min
55
60
70
90
ns
tAVQV
tACC
Address to Output Delay
CE# = VIL
OE# = VIL
Max
55
60
70
90
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
55
60
70
90
tGLQV
tOE
Output Enable to Output Delay
Max
25
30
35
tEHQZ
tDF
Chip Enable to Output High Z (Note 1)
Max
16
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
16
tSR/W
Latency Between Read and Write Operations
Min
20
tOEH
Output Enable
Hold Time (Note 1)
Read
Min
0
Toggle and
Data# Polling
Min
10
tAXQX
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
Min
0
tCE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tOE
0 V
RY/BY#
RESET#
tDF
tSR/W
tOH
相关PDF资料
PDF描述
S29AL008D90TAN010 Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked
S29AL008D70MFN010 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90MFN010 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D70MFN011 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL008D90MFN011 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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