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参数资料
| 型号： | S29AL008D90TAI023 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封装： | MO-142BDD, TSOP-48 |
| 文件页数： | 41/52页 |
| 文件大小： | 2004K |
| 代理商： | S29AL008D90TAI023 |
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46
S29AL008D
S29AL008D_00_A11 February 27, 2009
Da ta
Sh e e t
16. Physical Dimensions
16.1
TS 048—48-Pin Standard TSOP
Note
For reference only. BSC is an ANSI standard for Basic Space Centering.
3641 \ 16-038.10 \ 7.10.7
PACKAGE
TS/TSR 48
JEDEC
MO-142 (B) DD
SYMBOL
MIN
NOM
MAX
A
---
1.20
A1
0.05
---
0.15
A2
0.95
1.00
1.05
b1
0.17
0.20
0.23
b
0.17
0.22
0.27
c1
0.10
---
0.16
c
0.10
---
0.21
D19.80
20.00
20.20
D1
18.3018.40
18.50
E
11.90
12.00
12.10
e
0.50 BASIC
L
0.50
0.60
0.70
Θ
0
---
8
R
0.08
---
0.20
N48
NOTES:
1.
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORM TO ANSI Y14.5M-1982)
2.
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
3.
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN): INK OR LASER MARK.
4.
TO BE DETERMINED AT THE SEATING PLANE
-C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS
ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
5.
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD
PROTUSION IS 0.15mm (.0059") PER SIDE.
6.
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR
PROTUSION SHALL BE 0.08mm (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX.
MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT
LEAD TO BE 0.07mm (0.0028").
7.
THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10mm (.0039") AND 0.25mm (0.0098") FROM THE LEAD TIP.
8.
LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM
THE SEATING PLANE.
9.
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
相关PDF资料 |
PDF描述 |
|---|---|
| S29AL008D90TAN010 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D70MFN010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFN010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D70MFN011 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90MFN011 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29AL008D90TAIR10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 90NS 48TSOP - Trays |
| S29AL008D90TAIR11 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR12 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR13 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR20 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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