- 您现在的位置：买卖IC网 > PDF目录192296 > S29GL032M10BFIR20 (SPANSION LLC) T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination PDF资料下载
参数资料
| 型号： | S29GL032M10BFIR20 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封装： | 13 X 11 MM, LEAD FREE, FORTIFIED BGA-64 |
| 文件页数： | 7/158页 |
| 文件大小： | 4695K |
| 代理商： | S29GL032M10BFIR20 |
第1页第2页第3页第4页第5页第6页当前第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页第120页第121页第122页第123页第124页第125页第126页第127页第128页第129页第130页第131页第132页第133页第134页第135页第136页第137页第138页第139页第140页第141页第142页第143页第144页第145页第146页第147页第148页第149页第150页第151页第152页第153页第154页第155页第156页第157页第158页
104
S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00_B1_E August 4, 2004
Data she e t
Autoselect Command Sequence
The autoselect command sequence allows the host system to read several identifier codes at specific addresses:
Note: The device ID is read over three cycles. SA = Sector Address
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the autoselect command. The device then enters the autoselect mode. The system may read
at any address any number of times without initiating another autoselect command sequence:
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device
was previously in Erase Suspend).
Enter SecSi Sector/Exit SecSi Sector Command Sequence
The SecSi Sector region provides a secured data area containing an 8-word/16-byte random Electronic Serial
Number (ESN). The system can access the SecSi Sector region by issuing the three-cycle Enter SecSi Sector com-
mand sequence. The device continues to access the SecSi Sector region until the system issues the four-cycle
Exit SecSi Sector command sequence. The Exit SecSi Sector command sequence returns the device to normal
operation. Table 35 and Table 36 show the address and data requirements for both command sequences. See also
“SecSi (Secured Silicon) Sector Flash Memory Region” for further information. Note that the ACC function and un-
lock bypass modes are not available when the SecSi Sector is enabled.
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock
write cycles, followed by the program set-up command. The program address and data are written next, which in
turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings.
The device automatically provides internally generated program pulses and verifies the programmed cell margin.
Tables 31 and 32 show the address and data requirements for the word program command sequence,
respectively.
When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are
no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. Refer to
the Write Operation Status section for information on these status bits. Any commands written to the device dur-
ing the Embedded Program Algorithm are ignored. Note that the SecSi Sector, autoselect, and CFI functions are
unavailable when a program operation is in progress. Note that a hardware reset immediately terminates the
program operation. The program command sequence should be reinitiated once the device has returned to the
read mode, to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector boundaries. Programming to the
same word address multiple times without intervening erases (incremental bit programming) requires a modified
programming method. For such application requirements, please contact your local Spansion representative.
Word programming is supported for backward compatibility with existing Flash driver software and for occasional
writing of individual words. Use of write buffer programming (see below) is strongly recommended for general
programming use when more than a few words are to be programmed. The effective word programming time
using write buffer programming is approximately four times shorter than the single word programming time.
Identifier Code
A7:A0
(x16)
A6:A-1
(x8)
Manufacturer ID
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
SecSi Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
相关PDF资料 |
PDF描述 |
|---|---|
| S29GL032M10BFIR22 | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 4V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| S29GL032M10BFIR23 | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 9.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
| S29GL032M10BFIR12 | MirrorBit Flash Family |
| S29GL032M10BFIR13 | MirrorBit Flash Family |
| S29GL032M10BFIR30 | T528 Series - I, M, Z Case Sizes - Face Down Termination Tantalum Surface Mount Capacitor; Capacitance [nom]: 220uF; Working Voltage (Vdc)[max]: 6.3V; Capacitance Tolerance: +/-20%; Dielectric: Tantalum, Solid; ESR: 12mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-17; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 1.7mm; Temperature Range: -55C to +105C; Container: Tape & Reel; Qty per Container: 1,000; Features: Face Down Termination |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29GL032M10BFIR22 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR23 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10BFIR30 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR32 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10BFIR33 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
发布紧急采购，3分钟左右您将得到回复。