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参数资料
| 型号： | S8729 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 封装： | 4 X 4.80 MM, 1.80 MM HEIGHT, PLASTIC, MINIATURE, SIP-2 |
| 文件页数： | 2/2页 |
| 文件大小： | 87K |
| 代理商： | S8729 |
Si PIN photodiode
S8385/S8729 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. 2009 Hamamatsu Photonics K.K.
Cat. No. KPIN1064E05
Sep. 2009 DN
2
s Dimensional outlines (unit: mm)
s Spectral response
s Dark current vs. reverse voltage
KPINB0271EB
KPINB0273EA
KPINA0090EA
KPINA0091EB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
200
400
600
800
WAVELENGTH (nm)
1000
1200
PHOTO
SENSITIVITY
(A/W)
(Typ. Ta=25 C)
QE=100 %
S8729
S8729-10
S8729-04
S8385-04
S8385
10 pA
100 pA
1 nA
10 nA
1 pA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
100
DARK
CURRENT
(Typ. Ta=25 C)
S8385, S8385-04
S8729, S8729-04, S8729-10
S8385, S8385-04, S8729, S8729-04
S8729-10
5.0 MAX.
(INCLUDING BURR)
ACTIVE AREA
a
4.2
±
0.2
(INCLUDING
BURR)
4.7 *
1.8
5.0 MAX.
(INCLUDING BURR)
4.7 *
4.8 *
4.9
±
0.25
(0.8)
(1.25)
0.45
2.54
(2
×
)10
(2
×
)5
0.25
0.8
0.5
(2 ×) 0.5
(2 ×) 0.4
4.0
*
PHOTOSENSITIVE
SURFACE
2.0
DEPTH 0.15 MAX.
(2 ×) 10
°
(2 ×) 5
°
Tolerance unless otherwise noted: ±0.1, ±2
Chip position accuracy with respect to the
package dimensions marked *
X, Y
≤±0.2, θ≤±2
Symbol
a
S8385
S8385-04
2 × 2
2 × 3.3
S8729
S8729-04
5.0 MAX.
(INCLUDING BURR)
4.2
±
0.2
(INCLUDING
BURR)
4.7 *
5.0 MAX.
(INCLUDING BURR)
4.7 *
4.8 *
(2
×
)10
(2
×
)10
±
5
(2
×
)5
4.0
*
2.6
±
0.2
(2
×
)0.25
(2 ×) 10
°
(2 ×) 5
°
Tolerance unless otherwise noted: ±0.1, ±2
Chip position accuracy with respect to the
package dimensions marked *
X, Y
≤±0.2, θ≤±2
0.8
0.5
1.8
(2 ×) 4.5 ± 0.4
ACTIVE AREA
2 × 3.3
0.45
PHOTOSENSITIVE
SURFACE
2.0
DEPTH 0.15 MAX.
2.54
(2 ×) 0.5
(2 ×) 0.4
s Terminal capacitance vs. reverse voltage
KPINB0272EA
1 pF
10 pF
100 pF
1 nF
100 fF
0.1
1
10
REVERSE VOLTAGE (V)
100
TERMINAL
CAPACITANCE
(Typ. Ta=25 C, f=1 MHz)
S8729, S8729-04, S8729-10
S8385, S8385-04
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S8729-04 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si PIN photodiode |
| S8729-10 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Si PIN photodiode |
| S872980844 | 制造商:Denon 功能描述:^S872980842 |
| S872982060 | 制造商:Denon Electronics 功能描述:2SB1124 TR |
| S-873 | 制造商:RAF Electronic Hardware 功能描述:SPRING, COMPRESSION, 4.9N, 20.6MM; Body Length:20.6mm; Compressed Length:18mm; Compression Load Max:4.9N; External Diameter:19.43mm; Wire Diameter:0.8mm ;RoHS Compliant: Yes |
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