参数资料
| 型号： | SA5212AD,602 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 4/20页 |
| 文件大小： | 0K |
| 描述： | IC TRANSIMP AMP 140MHZ 8-SOIC |
| 标准包装： | 100 |
| 放大器类型： | 转阻 |
| 电路数： | 1 |
| 输出类型： | 差分 |
| -3db带宽： | 140MHz |
| 电流 - 电源： | 26mA |
| 电流 - 输出 / 通道： | 4mA |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
| 其它名称： | 568-1198-5 935028520602 SA5212AD |
Philips Semiconductors
Product specification
SA5212A
Transimpedance amplifier (140MHz)
1998 Oct 07
12
INPUT
OUT–
OUT+
PHOTODIODE
VB2
+
R1
R3
R12
R13
R5
R4
R7
R14
R15
Q1
Q3
Q2
Q4
Q15
Q16
Q11
Q12
GND2
GND1
VCC2
VCC1
R2
SD00328
Figure 11. Transimpedance Amplifier
VCC
VEQ3
VIN
IIN
INPUT
IF
IB
Q1
Q2
Q3
R2
R3
R4
RF
R1
IC1
SD00329
Figure 12. Shunt-Series Input Stage
DYNAMIC RANGE
The electrical dynamic range can be defined as the ratio of
maximum input current to the peak noise current:
Electrical dynamic range, DE, in a 200MHz bandwidth assuming
IINMAX = 120A and a wideband noise of IEQ=52nARMS for an
external source capacitance of CS = 1pF.
D
E +
(Max. input current)
(Peak noise current)
D
E(dB) + 20 log
(120
@ 10*6)
(2 52nA)
D
E(dB) + 20 log
(120
mA)
(73nA)
+ 64dB
In order to calculate the optical dynamic range the incident optical
power must be considered.
For a given wavelength
λ;
Energy of one Photon = hc
l
watt sec (Joule)
Where h=Planck’s Constant = 6.6
× 10-34 Joule sec.
c = speed of light = 3
× 108 m/sec
c /
λ = optical frequency
No. of incident photons/sec= where P=optical incident power
No. of incident photons/sec =
P
hc
l
where P = optical incident power
No. of generated electrons/sec = h @
P
hc
l
where
η = quantum efficiency
+
no. of generated electron hole paris
no. of incident photons
NI + h @
P
hc
l @
e Amps (Coulombs sec.)
where e = electron charge = 1.6
× 10-19 Coulombs
Responsivity R =
h@e
hc
l
Amp/watt
I
+ P @ R
Assuming a data rate of 400 Mbaud (Bandwidth, B=200MHz), the
noise parameter Z may be calculated as:1
Z
+
I
EQ
qB
+
52
@ 10*9
(1.6
@ 10*19)(200 @ 106)
+ 1625
Amp
where Z is the ratio of RMS noise output to the peak response to a
single hole-electron pair. Assuming 100% photodetector quantum
efficiency, half mark/half space digital transmission, 850nm
lightwave and using Gaussian approximation, the minimum required
optical power to achieve 10-9 BER is:
P
avMIN + 12
hc
l
BZ
+ 12 (2.3 @ 10*19)
200
@ 106 1625 + 897nW +* 30.5dBm,
where h is Planck’s Constant, c is the speed of light,
λ is the
wavelength. The minimum input current to the SA5212A, at this
input power is:
I
avMIN + qPavMIN
l
hc
+ 897 @ 10
*9 @ 1.6 @ 10*19
2.3
@ 10*19
= 624nA
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